Performance test for a pixelated silicon sensor with junction field effect transistor

Abstract

© 2020 Elsevier B.V. We fabricated a pixelated silicon sensor with a junction field effect transistor (JFET) on a 650μm thick, high-resistivity (> 5 kΩ⋅cm) n-type double-sided polished 6-in. silicon wafer using a double-sided fabrication process. The JFET, which had a cylindrical structure, acted as a switch to read out charges accumulated in the pixelated sensor. We investigated the electrical characteristics of the pixelated sensor, which had a size of 100μm×100μm. We also measured the drain current as a function of the drain voltage for different gate voltages to examine the switching performance of the JFET and optimized the design parameters of the pixelated sensor for the proper functioning of the switch. Furthermore, the pixelated sensor's responses under illumination by a light-emitting diode and X-rays were measured. The electrical characteristics and responses of the pixelated sensors are presented in this paper