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원자제어저차원전자계연구단
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Anisotropic transport induced by DC electrical current bias near the critical current

DC Field Value Language
dc.contributor.authorJunghyun Shin-
dc.contributor.authorSungyu Park-
dc.contributor.authorEunseong Kim-
dc.date.accessioned2020-12-22T02:32:33Z-
dc.date.accessioned2020-12-22T02:32:33Z-
dc.date.available2020-12-22T02:32:33Z-
dc.date.available2020-12-22T02:32:33Z-
dc.date.created2020-11-16-
dc.date.issued2020-10-
dc.identifier.issn2045-2322-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/7603-
dc.description.abstract© 2020, The Author(s). We investigated the transport characteristics of a square shape superconducting Ta thin film under DC electrical current bias along the diagonal direction. The resistance parallel (R∥) and perpendicular (R⊥) to the DC current, IDC, is measured with various magnetic fields. R∥ and R⊥ show contrasting dependence on IDC. First, the critical current of R∥ is smaller than that of R⊥. Second, R⊥ shows an unexpected reduction at current bias where R∥ shows a rapid increase near the transition from a flux flow state to a normal state. The intriguing anisotropic transport characteristics can be understood by the inhomogeneous current density profile over the square sample. Diagonal DC current induces an anisotropic current density profile where the current density is high near the biasing electrode and low at the center of the sample. Accordingly, the electrical transport in the perpendicular direction could remain less affected even near the critical current of R∥, which leads to the higher critical current in R⊥. Complicated conduction profile may also allow the anomalous reduction in the R⊥ before finally shifting to the normal state-
dc.description.uri1-
dc.language영어-
dc.publisherNATURE PUBLISHING GROUP-
dc.subjectSUPERCONDUCTOR-INSULATOR TRANSITION-
dc.subjectVORTEX STATE-
dc.subjectDRIVEN-
dc.subjectMOTION-
dc.titleAnisotropic transport induced by DC electrical current bias near the critical current-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000577475100065-
dc.identifier.scopusid2-s2.0-85092270939-
dc.identifier.rimsid73287-
dc.contributor.affiliatedAuthorSungyu Park-
dc.identifier.doi10.1038/s41598-020-73876-6-
dc.identifier.bibliographicCitationSCIENTIFIC REPORTS, v.10, no.1, pp.16841-
dc.citation.titleSCIENTIFIC REPORTS-
dc.citation.volume10-
dc.citation.number1-
dc.citation.startPage16841-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusSUPERCONDUCTOR-INSULATOR TRANSITION-
dc.subject.keywordPlusVORTEX STATE-
dc.subject.keywordPlusDRIVEN-
dc.subject.keywordPlusMOTION-
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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