BROWSE

Related Scientist

yum,junghwan's photo.

yum,junghwan
다차원탄소재료연구단
more info

ITEM VIEW & DOWNLOAD

Crystalline beryllium oxide on Si (100) deposited using E-beam evaporator and thermal oxidation

DC Field Value Language
dc.contributor.authorSeonno Yoon-
dc.contributor.authorSeung Min Lee-
dc.contributor.authorJung Hwan Yum-
dc.contributor.authorChristopher W. Bielawski-
dc.contributor.authorHi-Deok Lee-
dc.contributor.authorJungwoo Oh-
dc.date.available2019-05-02T08:07:05Z-
dc.date.created2019-03-19-
dc.date.issued2019-06-
dc.identifier.issn0169-4332-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/5636-
dc.description.abstractThe growth characteristics and electrical properties of thin films of crystalline beryllium oxide (BeO) on Si (100) substrates grown using electron beam evaporation (EBE) are described. To expand the commercial viability of BeO, a combination of EBE with thermal oxidation was optimized to facilitate its use in nanoscale semiconductor devices. The surfaces of the EBE BeO films were found to be smooth with limited quantities of native oxides or metal silicates, as determined using atomic force measurements and X-ray photoelectron spectroscopy, respectively. Moreover, high-resolution transmission electron microscopy revealed that the films were highly crystalline. Excellent insulator properties, including a dielectric constant of 6.77 and a breakdown voltage of 8.3 MV/cm, were deduced from a series of capacitance–voltage and leakage current measurements. Reflection electron energy loss spectroscopy and ultraviolet photoelectron spectroscopy indicated that the films exhibited a high band gap of 8.6 eV and a high conduction band offset of 3.43 eV. Collectively, these results indicate that EBE BeO films hold promise for use as electrical insulators in Si CMOS and nanoscale device applications. © 2019 Published by Elsevier B.V.-
dc.description.uri1-
dc.language영어-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectBeryllium-
dc.subjectBeryllium oxide-
dc.subjectCrystalline oxide-
dc.subjectE-beam evaporation-
dc.subjectThermal oxidation-
dc.titleCrystalline beryllium oxide on Si (100) deposited using E-beam evaporator and thermal oxidation-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000464931800098-
dc.identifier.scopusid2-s2.0-85061777020-
dc.identifier.rimsid67535-
dc.contributor.affiliatedAuthorJung Hwan Yum-
dc.contributor.affiliatedAuthorChristopher W. Bielawski-
dc.identifier.doi10.1016/j.apsusc.2019.02.095-
dc.identifier.bibliographicCitationAPPLIED SURFACE SCIENCE, v.479, pp.803 - 809-
dc.citation.titleAPPLIED SURFACE SCIENCE-
dc.citation.volume479-
dc.citation.startPage803-
dc.citation.endPage809-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusATOMIC-LAYER DEPOSITION-
dc.subject.keywordPlusULTRAVIOLET PHOTOELECTRON-SPECTROSCOPY-
dc.subject.keywordPlusELECTRICAL-PROPERTIES-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusBEO-
dc.subject.keywordPlusINTERFACE-
dc.subject.keywordPlusSI(001)-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusCEO2-
dc.subject.keywordAuthorBeryllium oxide-
dc.subject.keywordAuthorBeryllium-
dc.subject.keywordAuthorCrystalline oxide-
dc.subject.keywordAuthorE-beam evaporation-
dc.subject.keywordAuthorThermal oxidation-
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > 1. Journal Papers (저널논문)
Files in This Item:
1. 1-s2.0-S0169433219304386-main.pdfDownload

qrcode

  • facebook

    twitter

  • Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
해당 아이템을 이메일로 공유하기 원하시면 인증을 거치시기 바랍니다.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse