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Formation Mechanism, Growth Kinetics, and Stability Limits of Graphene Adlayers in Metal-Catalyzed CVD Growth

DC Field Value Language
dc.contributor.authorZhu-Jun Wang-
dc.contributor.authorFeng Ding-
dc.contributor.authorGyula Eres-
dc.contributor.authorMarkus Antonietti-
dc.contributor.authorRobert Schloegl-
dc.contributor.authorMarc Georg Willinger-
dc.date.available2019-02-12T10:54:57Z-
dc.date.created2018-08-17-
dc.date.issued2018-07-
dc.identifier.issn2196-7350-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/5544-
dc.description.abstractA new mechanism by which catalytic chemical vapor deposition of graphene spontaneously terminates at a single layer on Pt foils is discussed. This self-limited growth regime is identified by direct imaging of adlayer graphene evolution using in-situ environmental scanning electron microscopy. Two fundamentally different mechanisms for adlayer nucleation are revealed. Besides primary nucleation, which is the standard nucleation that occurs only at the onset of growth, a secondary nucleation of adlayers is observed near full coverage of the substrate. Direct observation reveals layer-dependent growth kinetics and the establishment of a dynamic equilibrium between the forward reaction of carbon incorporation and the reverse reaction of graphene etching. Increasing coverage of the active catalyst gives rise to a spontaneous reversal of adlayer evolution from growth to etching. The growth reversal has important practical benefits. It creates a self-limited growth regime in which all adlayer graphene is removed and it enables large-scale production of 100% single-layer graphene © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.description.uri1-
dc.language영어-
dc.publisherWILEY-
dc.subjectadlayer nucleation-
dc.subjectcatalytic chemical vapor deposition-
dc.subjectgraphene growth-
dc.subjectin-situ-
dc.subjectself-limited growth-
dc.titleFormation Mechanism, Growth Kinetics, and Stability Limits of Graphene Adlayers in Metal-Catalyzed CVD Growth-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000439739000008-
dc.identifier.scopusid2-s2.0-85047398804-
dc.identifier.rimsid64366-
dc.contributor.affiliatedAuthorFeng Ding-
dc.identifier.doi10.1002/admi.201800255-
dc.identifier.bibliographicCitationADVANCED MATERIALS INTERFACES, v.5, no.14, pp.1800255-
dc.citation.titleADVANCED MATERIALS INTERFACES-
dc.citation.volume5-
dc.citation.number14-
dc.citation.startPage1800255-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusSINGLE-CRYSTAL GRAPHENE-
dc.subject.keywordPlusSCANNING-TUNNELING-MICROSCOPY-
dc.subject.keywordPlusEPITAXIAL GRAPHENE-
dc.subject.keywordPlusCARBON-
dc.subject.keywordPlusCOPPER-
dc.subject.keywordPlusCU-
dc.subject.keywordPlusDYNAMICS-
dc.subject.keywordPlusSOLUBILITY-
dc.subject.keywordPlusRUTHENIUM-
dc.subject.keywordAuthoradlayer nucleation-
dc.subject.keywordAuthorcatalytic chemical vapor deposition-
dc.subject.keywordAuthorgraphene growth-
dc.subject.keywordAuthorin-situ-
dc.subject.keywordAuthorself-limited growth-
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > 1. Journal Papers (저널논문)
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