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VUV-Sensitive Silicon Photomultipliers for Xenon Scintillation Light Detection in nEXO

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Title
VUV-Sensitive Silicon Photomultipliers for Xenon Scintillation Light Detection in nEXO
Author(s)
Jamil, A; Ziegler, T; Hufschmidt, P; Li, G; Lupin-Jimenez, L; Michel, T; Ostrovskiy, I; Retiere, F; Schneider, J; Wagenpfeil, M; Alamre, A; Albert, JB; Anton, G; Arnquist, IJ; Badhrees, I; Barbeau, PS; Beck, D; Belov, V; Bhatta, T; Bourque, E; Brodsky, JP; Brown, E; Brunner, T; Burenkov, A; Cao, GF; Cao, L; Cen, WR; Chambers, C; Charlebois, SA; Chiu, M; Cleveland, B; Coon, M; Cote, M; Craycraft, A; Cree, W; Dalmasson, J; Daniels, T; Darroch, L; Daugherty, SJ; Daughhetee, J; Delaquis, S; Mesrobian-Kabakian, AD; DeVoe, R; Dilling, J; Ding, YY; Dolinski, MJ; Dragone, A; Echevers, J; Fabris, L; Fairbank, D; Fairbank, W; Farine, J; Feyzbakhsh, S; Fontaine, R; Fudenberg, D; Gallina, G; Giacomini, G; Gornea, R; Grata, G; Hansen, EV; Harris, D; Hasan, M; Heffner, M; Hoessl, J; Hoppe, EW; House, A; Hughes, M; Ito, Y; Iverson, A; Jessiman, C; Jewell, MJ; Jiang, XS; Karelin, A; Kaufman, LJ; Koffas, T; Kravitz, S; Krucken, R; Kuchenkov, A; Kumar, KS; Lan, Y; Larson, A; Douglas, Leonard; Li, S; Li, Z; Licciardi, C; Lin, YH; Lv, P; MacLellan, R; Mong, B; Moore, DC; Murray, K; Newby, RJ; Ning, Z; Njoya, O; Nolet, F; Nusair, O; Odgers, K; Odian, A; Oriunno, M; Orrell, JL; Ortega, GS; Overman, CT; Parent, S; Piepke, A; Pocar, A; Pratte, JE; Qiu, D; Radeka, V; Raguzin, E; Rao, T; Rescia, S; Robinson, A; Rossignol, T; Rowson, PC; Roy, N; Saldanha, R; Sangiorgio, S; Schmidt, S; Schubert, A; Sinclair, D; Skarpaas, K; Soma, AK; St-Hilaire, G; Stekhanov, V; Stiegler, T; Sun, XL; Tarka, M; Todd, J; Tolba, T; Totev, TI; Tsang, R; Tsang, T; Vachon, F; Veenstra, B; Veeraraghavan, V; Visser, G; Vuilleumier, JL; Wang, Q; Watkins, J; Weber, M; Wei, W; Wen, LJ; Wichoski, U; Wrede, G; Wu, SX; Wu, WH; Xia, Q; Yang, L; Yen, YR; Zeldovich, O; Zhang, X; Zhao, J; Zhou, Y
Subject
nEXO, ; photodetectors, ; silicon photomultiplier, ; vacuum ultraviolet (VUV) light, ; xenon detectors
Publication Date
2018-11
Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.65, no.11, pp.2823 - 2833
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Abstract
Future ton-scale liquefied noble gas detectors depend on efficient light detection in the vacuum ultraviolet (VUV) range. In the past years, silicon photomultipliers (SiPMs) have emerged as a valid alternative to standard photomultiplier tubes or large-area avalanche photodiodes. The next-generation double-beta decay experiment, nEXO, with a 5-ton liquid xenon time projection chamber will use SiPMs for detecting the 175-nm xenon scintillation light, in order to achieve an energy resolution of sigma/Q(beta beta) = 1%. This paper presents recent measurements of the VUV-HD generation SiPMs from Fondazione Bruno Kessler, Trento, Italy, in two complementary setups. It includes measurements of the photon-detection efficiency (PDE) with gaseous xenon scintillation light in a vacuum setup and dark measurements in a dry nitrogen gas setup. We report improved PDE at 175 nm compared to previous generation devices that would meet the criteria of nEXO. Furthermore, we present the projected nEXO detector light collection and energy resolution that could be achieved by using these SiPMs © 2018 IEEE.
URI
https://pr.ibs.re.kr/handle/8788114/5413
DOI
10.1109/TNS.2018.2875668
ISSN
0018-9499
Appears in Collections:
Center for Underground Physics(지하실험 연구단) > 1. Journal Papers (저널논문)
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