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Crystal facet engineering induced anisotropic transport of charge carriers in a perovskite

DC Field Value Language
dc.contributor.authorHewei Yang-
dc.contributor.authorYunzhan Zhou-
dc.contributor.authorYijun Yang-
dc.contributor.authorDing Yi-
dc.contributor.authorTao Ye-
dc.contributor.authorTran Dai Lam-
dc.contributor.authorDmitri Golberg-
dc.contributor.authorBate Bao-
dc.contributor.authorJiannian Yao-
dc.contributor.authorXi Wang-
dc.date.available2019-01-30T02:00:06Z-
dc.date.created2018-12-20-
dc.date.issued2018-11-
dc.identifier.issn2050-7526-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/5409-
dc.description.abstractPrecise control of crystal orientations and macroscopic morphology of a perovskite crystal is crucial for various optoelectronic applications relying on charge carrier transport tuning along exposed crystal facets. Here, taking methylammonium lead bromide (CH3NH3PbBr3) as an example, and employing a novel crystal facet engineering method, we successfully construct two kinds of perovskite crystals with exposed {001} and {110} facets. We find that the free carriers' photoluminescence lifetime on the {001} facets can be 3 times longer than that on {110} facets. The related mechanisms are investigated via fluorescence lifetime imaging microscopy and in situ transmission electron microscopy. These indicate that the different trap state density of exposed facets and crystal structure changing of CH3NH3PbBr3 under light and electron beam irradiation lead to the differences in carrier transport along different facets. By distinguishing the charge carrier transport on different CH3NH3PbBr3 exposed facets, micro-photodetectors have been constructed. A device fabricated with the {001} exposed facets exhibited two orders of magnitude higher photocurrent and half as much dark current as a {110} facet-based device. Thus, the crystal facet engineering of perovskites can be widely adopted for understanding physical/chemical properties of perovskite crystals and provides great potential for novel perovskite optoelectronic device applications ©The Royal Society of Chemistry 2018-
dc.description.uri1-
dc.language영어-
dc.publisherROYAL SOC CHEMISTRY-
dc.titleCrystal facet engineering induced anisotropic transport of charge carriers in a perovskite-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000449702600024-
dc.identifier.scopusid2-s2.0-85056516240-
dc.identifier.rimsid66384-
dc.contributor.affiliatedAuthorDing Yi-
dc.identifier.doi10.1039/c8tc04961k-
dc.identifier.bibliographicCitationJOURNAL OF MATERIALS CHEMISTRY C, v.6, no.43, pp.11707 - 11713-
dc.citation.titleJOURNAL OF MATERIALS CHEMISTRY C-
dc.citation.volume6-
dc.citation.number43-
dc.citation.startPage11707-
dc.citation.endPage11713-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusLIGHT-EMITTING-DIODES-
dc.subject.keywordPlusSOLAR-CELLS-
dc.subject.keywordPlusSINGLE-CRYSTALS-
dc.subject.keywordPlusULTRAVIOLET PHOTODETECTORS-
dc.subject.keywordPlusDEVICE PERFORMANCE-
dc.subject.keywordPlusCH3NH3PBI3-
dc.subject.keywordPlusPHOTORESPONSE-
dc.subject.keywordPlusTEM-
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > 1. Journal Papers (저널논문)
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