Low interface trap density in scaled bilayer gate oxides on 2D materials via nanofog low temperature atomic layer deposition
DC Field | Value | Language |
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dc.contributor.author | Iljo Kwak | - |
dc.contributor.author | Mahmut Kavrik | - |
dc.contributor.author | Jun Hong Park | - |
dc.contributor.author | Larry Grissom | - |
dc.contributor.author | Bernd Fruhberger | - |
dc.contributor.author | Keith T. Wong | - |
dc.contributor.author | Sean Kang | - |
dc.contributor.author | Andrew C. Kummel | - |
dc.date.available | 2019-01-04T08:53:32Z | - |
dc.date.created | 2018-09-17 | - |
dc.date.issued | 2019-01 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/5311 | - |
dc.description.abstract | Al2O3 and Al2O3/HfO2 bilayer gate stacks were directly deposited on the surface of 2D materials via low temperature ALD/CVD of Al2O3 and high temperature ALD of HfO2 without any surface functionalization. The process is self-nucleating even on inert surfaces because a chemical vapor deposition (CVD) component was intentionally produced in the Al2O3 deposition by controlling the purge time between TMA and H2O precursor pulses at 50 °C. The CVD growth component induces formation of sub-1 nm AlOx particles (nanofog) on the surface, providing uniform nucleation centers. The ALD process is consistent with the generation of sub-1 nm gas phase particles which stick to all surfaces and is thus denoted as nanofog ALD. To prove the ALD/CVD Al2O3 nucleation layer has the conformality of a self-limiting process, the nanofog was deposited on a high aspect ratio Si3N4/SiO2/Si pattern surface; conformality of >90% was observed for a sub 2 nm film consistent with a self-limiting process. MoS2 and HOPG (highly oriented pyrolytic graphite) metal oxide semiconductor capacitors (MOSCAPs) were fabricated with single layer Al2O3 ALD at 50 °C and with the bilayer Al2O3/HfO2 stacks having Cmax of ∼1.1 µF/cm2 and 2.2 µF/cm2 respectively. In addition, Pd/Ti/TiN gates were used to increase Cmax by scavenging oxygen from the oxide layer which demonstrated Cmax of ∼2.7 µF/cm2. This is the highest reported Cmax and Cmax/Leakage of any top gated 2D semiconductor MOSCAP or MOSFET. The gate oxide prepared on a MoS2 substrate results in more than an 80% reduction in Dit compared to a Si0.7Ge0.3(0 0 1) substrate. This is attributed to a Van der Waals interaction between the oxide layer and MoS2 surface instead of a covalent bonding allowing gate oxide deposition without the generation of dangling bonds. © 2018 | - |
dc.description.uri | 1 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | Capacitance-voltage (C−V) | - |
dc.subject | Density of interface states | - |
dc.subject | Electrical characterization | - |
dc.subject | Graphene | - |
dc.subject | High-k dielectrics | - |
dc.subject | Molybdenum disulfide (MoS2) | - |
dc.title | Low interface trap density in scaled bilayer gate oxides on 2D materials via nanofog low temperature atomic layer deposition | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000452782100085 | - |
dc.identifier.scopusid | 2-s2.0-85052876450 | - |
dc.identifier.rimsid | 65446 | - |
dc.contributor.affiliatedAuthor | Jun Hong Park | - |
dc.identifier.doi | 10.1016/j.apsusc.2018.08.034 | - |
dc.identifier.bibliographicCitation | APPLIED SURFACE SCIENCE, v.463, no.1, pp.758 - 766 | - |
dc.citation.title | APPLIED SURFACE SCIENCE | - |
dc.citation.volume | 463 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 758 | - |
dc.citation.endPage | 766 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Capacitance-voltage (C−V) | - |
dc.subject.keywordAuthor | Density of interface states | - |
dc.subject.keywordAuthor | Electrical characterization | - |
dc.subject.keywordAuthor | Graphene | - |
dc.subject.keywordAuthor | High-k dielectrics | - |
dc.subject.keywordAuthor | Molybdenum disulfide (MoS2) | - |