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Frank–van der Merwe Growth versus Volmer–Weber Growth in Successive Stacking of a Few-Layer Bi2Te3/Sb2Te3 by van der Waals Heteroepitaxy: The Critical Roles of Finite Lattice-Mismatch with Seed Substrates

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dc.contributor.authorHoseok Heo-
dc.contributor.authorJi Ho Sung-
dc.contributor.authorJi-Hoon Ahn-
dc.contributor.authorFereshte Ghahari-
dc.contributor.authorTakashi Taniguchi-
dc.contributor.authorKenji Watanabe-
dc.contributor.authorPhilip Kim-
dc.contributor.authorMoon-Ho Jo-
dc.date.available2017-09-05T05:32:31Z-
dc.date.created2017-02-24-
dc.date.issued2017-02-
dc.identifier.issn2199-160X-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/3764-
dc.description.abstractDifferent growth mechanisms of van der Waals heteroepitaxial 2D Bi2Te3/Sb2Te3 stacking by choosing different substrates are reported. Sequential Bi2Te3/Sb2Te3 stacking growth mode becomes layer-by-layer growth on h-BN substrates, and 3D island growth on SiO2/Si. Compressive strain in the h-BN substrates imposed by the lattice mismatch plays a crucial role to determine different growth modes in these 2D nucleation kinetics models. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.description.uri1-
dc.language영어-
dc.publisherWILEY-
dc.subject2D materials-
dc.subjectmetal chalcogenide-
dc.subjectsuperlattice-
dc.subjectthin film growth modes-
dc.subjectvan der Waals epitaxy-
dc.titleFrank–van der Merwe Growth versus Volmer–Weber Growth in Successive Stacking of a Few-Layer Bi2Te3/Sb2Te3 by van der Waals Heteroepitaxy: The Critical Roles of Finite Lattice-Mismatch with Seed Substrates-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000394901900005-
dc.identifier.scopusid2-s2.0-85009997029-
dc.identifier.rimsid58861ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorHoseok Heo-
dc.contributor.affiliatedAuthorJi Ho Sung-
dc.contributor.affiliatedAuthorJi-Hoon Ahn-
dc.contributor.affiliatedAuthorMoon-Ho Jo-
dc.identifier.doi10.1002/aelm.201600375-
dc.identifier.bibliographicCitationADVANCED ELECTRONIC MATERIALS, v.3, no.2, pp.1600375-
dc.citation.titleADVANCED ELECTRONIC MATERIALS-
dc.citation.volume3-
dc.citation.number2-
dc.citation.startPage1600375-
dc.date.scptcdate2018-10-01-
dc.description.wostc3-
dc.description.scptc3-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordAuthor2D materials-
dc.subject.keywordAuthormetal chalcogenide-
dc.subject.keywordAuthorsuperlattice-
dc.subject.keywordAuthorthin film growth modes-
dc.subject.keywordAuthorvan der Waals epitaxy-
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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