Scintillation Characterizations of Tin Doped Lithium Iodide Crystals at Room and Low Temperature
DC Field | Value | Language |
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dc.contributor.author | Khan S. | - |
dc.contributor.author | Kim H.J. | - |
dc.contributor.author | Y. D. Kim | - |
dc.contributor.author | M. H. Lee | - |
dc.date.available | 2016-05-30T08:32:06Z | - |
dc.date.created | 2016-05-17 | - |
dc.date.issued | 2016-04 | - |
dc.identifier.issn | 0018-9499 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/2511 | - |
dc.description.abstract | The crystals of 0.02%, 0.05%, 0.1%, and 0.5% Sn doped LiI are grown by the vertical Bridgman technique. The luminescence and scintillation properties of the grown crystals are investigated. X-ray excited emission spectrum of LiI (Sn) showed a broad emission band between 400-650 nm wavelength range at room temperature. Such emission is attributed to Sn2+ ion. Scintillation properties such as energy resolution, decay time profiles, and light yield are measured under 662 keV (137Cs) γ-ray excitation at room temperature. A maximum light yield of 6000 ± 600 ph/MeV is measured at room temperature. LiI (Sn) single crystals showed two exponential decay components under γ-ray excitation. The dependence of scintillation properties on the temperature is also presented. Changes in the decay time and light yield are measured from 295 K down to 10 K. The light yield of LiI (Sn) at 50 K is found to be nine times higher than that at room temperature. © 2016 IEEE | - |
dc.description.uri | 1 | - |
dc.language | 영어 | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | Decay time | - |
dc.subject | energy resolution | - |
dc.subject | light yield | - |
dc.subject | LiI (Sn) | - |
dc.subject | scintillation properties | - |
dc.subject | X-ray excitation | - |
dc.title | Scintillation Characterizations of Tin Doped Lithium Iodide Crystals at Room and Low Temperature | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000375028700004 | - |
dc.identifier.scopusid | 2-s2.0-84964546320 | - |
dc.identifier.rimsid | 55477 | ko |
dc.date.tcdate | 2018-10-01 | - |
dc.contributor.affiliatedAuthor | Y. D. Kim | - |
dc.contributor.affiliatedAuthor | M. H. Lee | - |
dc.identifier.doi | 10.1109/TNS.2016.2530823 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.63, no.2, pp.448 - 452 | - |
dc.citation.title | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | - |
dc.citation.volume | 63 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 448 | - |
dc.citation.endPage | 452 | - |
dc.date.scptcdate | 2018-10-01 | - |
dc.description.wostc | 1 | - |
dc.description.scptc | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Decay time | - |
dc.subject.keywordAuthor | energy resolution | - |
dc.subject.keywordAuthor | light yield | - |
dc.subject.keywordAuthor | LiI (Sn) | - |
dc.subject.keywordAuthor | scintillation properties | - |
dc.subject.keywordAuthor | X-ray excitation | - |