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Symmetry induced peculiar Rashba effect on thallium adsorbed Si(1 1 1) surfaces

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dc.contributor.authorKazuyuki Sakamoto-
dc.contributor.authorTatsuki Oda-
dc.contributor.authorAkio Kimura-
dc.contributor.authorYasuo Takeichi-
dc.contributor.authorJun Fujii-
dc.contributor.authorR.I.G. Uhrberg-
dc.contributor.authorMarkus Donat-
dc.contributor.authorHan Woong Yeom-
dc.date.available2016-01-25T00:13:38Z-
dc.date.created2016-01-15-
dc.date.issued2015-05-
dc.identifier.issn0368-2048-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/2355-
dc.description.abstractThe geometric symmetry of the surface plays an important role for the spin–orbit-induced spin texture of two-dimensional electronic states. This article reviews the peculiar Rashba spins induced by a C3 symmetry, including the completely spin polarized surface states with the polarization vector oriented perpendicular to the surface, i.e. a direction that is not expected in a typical Rashba system. This review also describes that this peculiar Rashba situation has possibility to suppress backscattering and therefore to greatly improve the efficiency of spin transport, which is an essential issue in the development of high-performance semiconductor spintronic devices. © 2014 Elsevier B.V. All rights reserved.-
dc.language영어-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectRashba effect, Symmetry, Silicon, Thallium-
dc.titleSymmetry induced peculiar Rashba effect on thallium adsorbed Si(1 1 1) surfaces-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000357909500016-
dc.identifier.scopusid2-s2.0-84929322418-
dc.identifier.rimsid22022ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorHan Woong Yeom-
dc.identifier.doi10.1016/j.elspec.2014.09.008-
dc.identifier.bibliographicCitationJOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, v.201, no.SI, pp.88 - 91-
dc.relation.isPartOfJOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA-
dc.citation.titleJOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA-
dc.citation.volume201-
dc.citation.numberSI-
dc.citation.startPage88-
dc.citation.endPage91-
dc.date.scptcdate2018-10-01-
dc.description.wostc1-
dc.description.scptc1-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordAuthorRashba effect-
dc.subject.keywordAuthorSilicon-
dc.subject.keywordAuthorSymmetry-
dc.subject.keywordAuthorThallium-
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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