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Nanometer-Scale 1D Negative Differential Resistance Channels in Van Der Waals Layers

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dc.contributor.authorQirong Yao-
dc.contributor.authorJae Whan Park-
dc.contributor.authorWon, Choongjae-
dc.contributor.authorCheong, Sang-Wook-
dc.contributor.authorHan Woong Yeom-
dc.date.accessioned2025-01-15T07:00:03Z-
dc.date.available2025-01-15T07:00:03Z-
dc.date.created2024-12-09-
dc.date.issued2025-01-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/16194-
dc.description.abstractNegative differential resistance (NDR) is the key feature of resonant tunneling diodes exploited for high-frequency and low-power devices and recent studies have focused on NDR in van der Waals heterostructures and nanoscale materials. Here, strong NDR confined along a 1-nm-wide 1D channel within a van der Waals layer 1T-TaS2 is reported. Using scanning tunneling microscopy, a double 1D NDR channel formed along the sides of a charge–density-wave domain wall of 1T-TaS2 is found. The density functional theory calculation elucidates that the strong local band-bending at the domain wall and the interlayer orbital overlap cooperate to bring about 1D NDR channels. Furthermore, the NDR is well controlled by changing the tunneling junction distance. This result would be important for nanoscale device applications based on strong nonlinear resistance within van der Waals material architectures. © 2024 The Author(s). Advanced Science published by Wiley-VCH GmbH.-
dc.language영어-
dc.publisherWiley-VCH Verlag-
dc.titleNanometer-Scale 1D Negative Differential Resistance Channels in Van Der Waals Layers-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid001358208400001-
dc.identifier.scopusid2-s2.0-85208925615-
dc.identifier.rimsid84607-
dc.contributor.affiliatedAuthorQirong Yao-
dc.contributor.affiliatedAuthorJae Whan Park-
dc.contributor.affiliatedAuthorHan Woong Yeom-
dc.identifier.doi10.1002/advs.202408090-
dc.identifier.bibliographicCitationAdvanced Science, v.12, no.2-
dc.relation.isPartOfAdvanced Science-
dc.citation.titleAdvanced Science-
dc.citation.volume12-
dc.citation.number2-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusCHARGE-DENSITY WAVES-
dc.subject.keywordAuthorinterlayer orbital overlap-
dc.subject.keywordAuthornegative differential resistance-
dc.subject.keywordAuthorscanning tunneling microscopy and spectroscopy-
dc.subject.keywordAuthor1T-TaS<sub>2</sub>-
dc.subject.keywordAuthordensity-functional calculations-
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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