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원자제어저차원전자계연구단
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Topological Complex Charge Conservation in Nontrivial Z2 × Z2 Domain Walls

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dc.contributor.authorJhinhwan Lee-
dc.contributor.authorHae-Ryong Park-
dc.contributor.authorKyung-Hwan Jin-
dc.contributor.authorJun Sung Kim-
dc.contributor.authorSang-Wook Cheong-
dc.contributor.authorHan-Woong Yeom-
dc.date.accessioned2024-07-01T05:50:04Z-
dc.date.available2024-07-01T05:50:04Z-
dc.date.created2024-03-25-
dc.date.issued2024-06-
dc.identifier.issn0935-9648-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/15304-
dc.description.abstractLocalized topological modes such as solitons, Majorana Fermions, and skyrmions are attracting great interest as robust information carriers for future devices. Here, a novel conserved quantity for topological domain wall networks of a Z2 × Z2 order generated with spin-polarized current in Sr2VO3FeAs is discovered. Domain walls are mobilized by the scanning tunneling current, which also observes in atomic scale active dynamics of domain wall vertices including merge, bifurcation, pair creation, and annihilation. Within this dynamics, the product of the topological complex charges defined for domain wall vertices is conserved with a novel boundary-charge correspondence rule. These results may open an avenue toward topological electronics based on domain wall vertices in generic Z2 × Z2 systems. © 2024 Wiley-VCH GmbH.-
dc.language영어-
dc.publisherWILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.titleTopological Complex Charge Conservation in Nontrivial Z2 × Z2 Domain Walls-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid001189350600001-
dc.identifier.scopusid2-s2.0-85188241757-
dc.identifier.rimsid82745-
dc.contributor.affiliatedAuthorJhinhwan Lee-
dc.contributor.affiliatedAuthorHae-Ryong Park-
dc.contributor.affiliatedAuthorKyung-Hwan Jin-
dc.contributor.affiliatedAuthorJun Sung Kim-
dc.contributor.affiliatedAuthorHan-Woong Yeom-
dc.identifier.doi10.1002/adma.202313803-
dc.identifier.bibliographicCitationAdvanced Materials, v.36, no.25-
dc.relation.isPartOfAdvanced Materials-
dc.citation.titleAdvanced Materials-
dc.citation.volume36-
dc.citation.number25-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusCHIRAL SOLITONS-
dc.subject.keywordPlusDYNAMICS-
dc.subject.keywordAuthorconservation of topological charge-
dc.subject.keywordAuthorSTM-
dc.subject.keywordAuthortopological complex charge-
dc.subject.keywordAuthortranslative domain walls-
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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