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Mobile Kink Solitons in a Van der Waals Charge-Density-Wave Layer

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dc.contributor.authorJinwon Lee-
dc.contributor.authorJae Whan Park-
dc.contributor.authorGil Young Cho-
dc.contributor.authorHan Woong Yeom-
dc.date.accessioned2023-11-24T22:00:29Z-
dc.date.available2023-11-24T22:00:29Z-
dc.date.created2023-06-12-
dc.date.issued2023-07-
dc.identifier.issn0935-9648-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/14216-
dc.description.abstractKinks, point-like geometrical defects along dislocations, domain walls, and DNA, are stable and mobile, as solutions of a sine-Gordon wave equation. While they are widely investigated for crystal deformations and domain wall motions, electronic properties of individual kinks have received little attention. In this work, electronically and topologically distinct kinks are discovered along electronic domain walls in a correlated van der Waals insulator of 1T-TaS2. Mobile kinks and antikinks are identified as trapped by pinning defects and imaged in scanning tunneling microscopy. Their atomic structures and in-gap electronic states are unveiled, which are mapped approximately into Su–Schrieffer–Heeger solitons. The twelvefold degeneracy of the domain walls in the present system guarantees an extraordinarily large number of distinct kinks and antikinks to emerge. Such large degeneracy together with the robust geometrical nature may be useful for handling multilevel information in van der Waals materials architectures. © 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.-
dc.language영어-
dc.publisherJohn Wiley and Sons Inc-
dc.titleMobile Kink Solitons in a Van der Waals Charge-Density-Wave Layer-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000998816000001-
dc.identifier.scopusid2-s2.0-85160712843-
dc.identifier.rimsid80937-
dc.contributor.affiliatedAuthorJinwon Lee-
dc.contributor.affiliatedAuthorJae Whan Park-
dc.contributor.affiliatedAuthorGil Young Cho-
dc.contributor.affiliatedAuthorHan Woong Yeom-
dc.identifier.doi10.1002/adma.202300160-
dc.identifier.bibliographicCitationAdvanced Materials, v.35, no.29-
dc.relation.isPartOfAdvanced Materials-
dc.citation.titleAdvanced Materials-
dc.citation.volume35-
dc.citation.number29-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusDOMAIN-WALLS-
dc.subject.keywordPlusOPTICAL SOLITONS-
dc.subject.keywordPlusCHIRAL SOLITONS-
dc.subject.keywordPlusEXCITATIONS-
dc.subject.keywordPlusGENERATION-
dc.subject.keywordPlusSTATES-
dc.subject.keywordPlusPHASE-
dc.subject.keywordAuthorcharge density waves-
dc.subject.keywordAuthordomain walls-
dc.subject.keywordAuthorkinks-
dc.subject.keywordAuthortransition metal dichalcogenide-
dc.subject.keywordAuthorvan der Waals layers-
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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