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Electrochemically exfoliated phosphorene nanosheet thin films for wafer-scale near-infrared phototransistor array

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dc.contributor.authorJeon, Youngseo-
dc.contributor.authorRhee, Dongjoon-
dc.contributor.authorWu, Bing-
dc.contributor.authorMazanek, Vlastimil-
dc.contributor.authorKim, In Soo-
dc.contributor.authorDonghee Son-
dc.contributor.authorSofer, Zdeněk-
dc.contributor.authorKang, Joohoon-
dc.date.accessioned2023-01-26T02:33:28Z-
dc.date.available2023-01-26T02:33:28Z-
dc.date.created2022-11-29-
dc.date.issued2022-11-
dc.identifier.issn2397-7132-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/12587-
dc.description.abstract© 2022, The Author(s).Two-dimensional (2D) black phosphorus (BP), or phosphorene, has recently emerged as a promising 2D semiconductor because of its p-type charge transport behavior and near-infrared photoresponsivity. However, the application of BP in practical electronic and optoelectronic devices is hindered by challenges in producing high-quality BP films over large areas. In this manuscript, we present a facile solution-based process to create wafer-scale BP films for fabrication of p-channel field-effect transistors that are responsive to near infrared light. Few-layer BP nanosheets are first exfoliated from the bulk crystal via electrochemical intercalation of cationic molecules and then vacuum-filtered through an anodic aluminum oxide membrane. The resulting BP film can be transferred onto an SiO2-coated silicon substrate, thereby allowing for realization of field-effect transistors after electrode deposition and thermal annealing. The transistor array exhibits spatial uniformity in electrical performance with an average hole mobility of ~0.002 cm2 V−1 s−1 and on/off ratio of 130. Furthermore, gate-induced modulation of the BP channel allows for enhancement in the photoresponsivity for 1550-nm light illumination up to 24 mA W−1, which benefits the application of the phototransistor array for near infrared imaging.-
dc.language영어-
dc.publisherNature Research-
dc.titleElectrochemically exfoliated phosphorene nanosheet thin films for wafer-scale near-infrared phototransistor array-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000884881400001-
dc.identifier.scopusid2-s2.0-85141933641-
dc.identifier.rimsid79229-
dc.contributor.affiliatedAuthorDonghee Son-
dc.identifier.doi10.1038/s41699-022-00360-2-
dc.identifier.bibliographicCitationnpj 2D Materials and Applications, v.6, no.1-
dc.relation.isPartOfnpj 2D Materials and Applications-
dc.citation.titlenpj 2D Materials and Applications-
dc.citation.volume6-
dc.citation.number1-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusCONTACT RESISTANCE-
dc.subject.keywordPlusBLACK-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusMONOLAYER-
dc.subject.keywordPlusMOS2-
dc.subject.keywordPlusGAP-
Appears in Collections:
Center for Neuroscience Imaging Research (뇌과학 이미징 연구단) > 1. Journal Papers (저널논문)
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