Decoupling of CVD-grown epitaxial graphene using NaCl intercalation
DC Field | Value | Language |
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dc.contributor.author | Kim, Yohan | - |
dc.contributor.author | Han, Huijun | - |
dc.contributor.author | Da Luo | - |
dc.contributor.author | Rodney S. Ruoff | - |
dc.contributor.author | Hyung-Joon Shin | - |
dc.date.accessioned | 2023-01-26T02:31:01Z | - |
dc.date.available | 2023-01-26T02:31:01Z | - |
dc.date.created | 2022-11-29 | - |
dc.date.issued | 2022-12 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/12560 | - |
dc.description.abstract | The structural and electronic properties of graphene grown on catalytic metal surfaces are significantly modified via graphene-substrate interaction. To minimize the influence of the metal substrate, a dielectric buffer layer can be introduced between the graphene and metal substrate. However, the catalytic synthesis of graphene limits the potential alternatives for buffer layers. The intercalation of atoms below the graphene layer is a promising method that does not require the chemical treatment of graphene or the substrate. In this study, the electronic and structural properties of single-layer graphene (SLG) on the Cu(111) substrate intercalated with ultrathin NaCl thin films were investigated using scanning tunnelling microscopy. The intercalation of the NaCl monolayer decoupled SLG from the metal substrate, thereby producing quasi-freestanding graphene. | - |
dc.language | 영어 | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Decoupling of CVD-grown epitaxial graphene using NaCl intercalation | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000881426400001 | - |
dc.identifier.scopusid | 2-s2.0-85142309964 | - |
dc.identifier.rimsid | 79337 | - |
dc.contributor.affiliatedAuthor | Da Luo | - |
dc.contributor.affiliatedAuthor | Rodney S. Ruoff | - |
dc.contributor.affiliatedAuthor | Hyung-Joon Shin | - |
dc.identifier.doi | 10.1039/d2nr05660g | - |
dc.identifier.bibliographicCitation | NANOSCALE, v.14, no.45, pp.16929 - 16935 | - |
dc.relation.isPartOf | NANOSCALE | - |
dc.citation.title | NANOSCALE | - |
dc.citation.volume | 14 | - |
dc.citation.number | 45 | - |
dc.citation.startPage | 16929 | - |
dc.citation.endPage | 16935 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SCANNING-TUNNELING-MICROSCOPY | - |
dc.subject.keywordPlus | ELECTRONIC-PROPERTIES | - |
dc.subject.keywordPlus | DIELECTRIC-CONSTANT | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | METAL | - |