The movement of fractionalized phase defects, that can be considered as fractional solitons promising for future information technology, is observed in atomic chains formed along step edges of silicon surfaces, solitons may serve as robust, topologically protected information carriers in future information technology Localized modes in one-dimensional (1D) topological systems, such as Majonara modes in topological superconductors, are promising candidates for robust information processing. While theory predicts mobile integer and fractional topological solitons in 1D topological insulators, experiments so far have unveiled immobile, integer solitons only. Here we observe fractionalized phase defects moving along trimer silicon atomic chains formed along step edges of a vicinal silicon surface. By means of tunnelling microscopy, we identify local defects with phase shifts of 2 pi/3 and 4 pi/3 with their electronic states within the band gap and with their motions activated above 100 K. Theoretical calculations reveal the topological soliton origin of the phase defects with fractional charges of +/- 2e/3 and +/- 4e/3. Additionally, we create and annihilate individual solitons at desired locations by current pulses from the probe tip. Mobile and manipulable topological solitons may serve as robust, topologically protected information carriers in future information technology.