BROWSE

Related Scientist

yum,junghwan's photo.

yum,junghwan
다차원탄소재료연구단
more info

ITEM VIEW & DOWNLOAD

Crystalline BeO Grown on 4H-SiC via Atomic Layer Deposition: Band Alignment and Interface Defects

DC Field Value Language
dc.contributor.authorLee, Seung Min-
dc.contributor.authorJang, Yoonseo-
dc.contributor.authorJung, Jongho-
dc.contributor.authorJung Hwan Yum-
dc.contributor.authorEric S. Larsen-
dc.contributor.authorLee, Sang Yeon-
dc.contributor.authorSeo, Hyungtak-
dc.contributor.authorChristopher W. Bielawski-
dc.contributor.authorLee, Hi-Deok-
dc.contributor.authorOh, Jungwoo-
dc.date.accessioned2021-07-29T08:30:06Z-
dc.date.accessioned2021-07-29T08:30:06Z-
dc.date.available2021-07-29T08:30:06Z-
dc.date.available2021-07-29T08:30:06Z-
dc.date.created2021-04-28-
dc.date.issued2019-04-
dc.identifier.issn2637-6113-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/10013-
dc.description.abstractA crystalline beryllium oxide (BeO) film was grown on 4H-silicon carbide (4H-SiC) via thermal atomic layer deposition (ALD). Diethylberyllium and water were used as key precursors. The growth rate of BeO corresponded to 0.8 angstrom/cycle over the temperature range of 150-200 degrees C. Transmission electron microscopy and X-ray diffraction of BeO/4H-SiC demonstrated that wurtzite BeO (0002) was grown on 4H-SiC (0001) substrate. The average crystallite sizes of BeO were 15-16 nm, and the compressive strain was applied to the BeO film in the out-of-plane direction. The band alignment and interface defects of BeO/4H-SiC were determined by using internal photoemission spectroscopy (IPE), ultraviolet photoelectron spectroscopy (UPS), and reflection energy loss spectroscopy (REELS). The electron conduction band offset (CBO), valence band offset (VBO), and energy bandgap of 4H-SiC and BeO corresponded to 2.28 +/- 0.1 eV, 2.53 +/- 0.01 eV, 3.16 +/- 0.1 eV, and 8.3 +/- 0.05 eV, respectively. The calculated bandgap (7.97 eV) of a thin BeO film was obtained from the sum of CBO (2.28 eV), VBO (2.53 eV), and the SiC bandgap (3.16 eV). The difference between the calculated (7.97 eV) and REELS (8.3 eV) bandgaps of BeO film is due to the error bars between the analysis methods. Interface defect levels, as determined via IPE analysis, corresponded to 3.53 +/- 0.1 eV (graphitic carbon) and 4.46 +/- 0.1 eV (pi-bonded carbon) and were formed during the ohmic annealing process.-
dc.language영어-
dc.publisherAMER CHEMICAL SOC-
dc.titleCrystalline BeO Grown on 4H-SiC via Atomic Layer Deposition: Band Alignment and Interface Defects-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000496307900019-
dc.identifier.scopusid2-s2.0-85072208350-
dc.identifier.rimsid75500-
dc.contributor.affiliatedAuthorJung Hwan Yum-
dc.contributor.affiliatedAuthorEric S. Larsen-
dc.contributor.affiliatedAuthorChristopher W. Bielawski-
dc.identifier.doi10.1021/acsaelm.9b00098-
dc.identifier.bibliographicCitationACS Applied Electronic Materials, v.1, no.4, pp.617 - 624-
dc.relation.isPartOfACS Applied Electronic Materials-
dc.citation.titleACS Applied Electronic Materials-
dc.citation.volume1-
dc.citation.number4-
dc.citation.startPage617-
dc.citation.endPage624-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscopus-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusMICROSTRUCTURE-
dc.subject.keywordPlusSIC/SIO2-
dc.subject.keywordPlusOFFSETS-
dc.subject.keywordAuthorberyllium oxide (BeO)-
dc.subject.keywordAuthorsilicon carbide (SiC)-
dc.subject.keywordAuthorband alignment-
dc.subject.keywordAuthorinternal photoemission spectroscopy (IPE)-
dc.subject.keywordAuthorreflection electron energy loss spectroscopy (REELS)-
dc.subject.keywordAuthorultraviolet photoelectron spectroscopy (UPS)-
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > 1. Journal Papers (저널논문)
Files in This Item:
There are no files associated with this item.

qrcode

  • facebook

    twitter

  • Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
해당 아이템을 이메일로 공유하기 원하시면 인증을 거치시기 바랍니다.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse