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Lee, Young Hee

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Results 181-200 of 332

Publication Date2017-09 Role of alkali metal promoter in enhancing lateral growth of monolayer transition metal dichalcogenides
Hyun Kim; Gang Hee Han; Seok Joon Yun, et al

NANOTECHNOLOGY, v.28, no.36, pp.36LT01
Publication Date2017-08 Ultrastretchable Analog/Digital Signal Transmission Line with Carbon Nanotube Sheets
Yourack Lee; Min-Kyu Joo; Viet Thong Le, et al

ACS APPLIED MATERIALS & INTERFACES, v.9, no.31, pp.26286 - 26292
Publication Date2017-08 Carbon-Nanotube-Templated, Sputter-Deposited, Flexible Superconducting NbN Nanowire Yarns
Jeong-Gyun Kim; Haeyong Kang; Yourack Lee, et al

ADVANCED FUNCTIONAL MATERIALS, v.27, no.30, pp.1701108
Publication Date2017-08 LOW-TEMPERATURE OHMIC CONTACT TO MONOLAYER MOS2 BY VAN DER WAALS BONDED CO/H-BN ELECTRODES
Xu Cui; En-Min Shih; Luis A. Jauregui, et al

NANO LETTERS, v.17, no.8, pp.4781 - 4786
Publication Date2017-06 Feasibility of ultra-sensitive 2D layered Hall elements
Min-Kyu Joo; Joonggyu Kim; Gwanmu Lee, et al

2D MATERIALS, v.4, no.2, pp.021029
Publication Date2017-06 Te vacancy-driven superconductivity in orthorhombic molybdenum ditelluride
Suyeon Cho; Se Hwang Kang; Ho Sung Yoo, et al

2D MATERIALS, v.4, no.2, pp.021030
Publication Date2017-06 Impact of Carboxyl Groups in Graphene Oxide on Chemoselective Alcohol Oxidation with Ultra-Low Carbocatalyst Loading
Yan Cui; Young Hee Lee; Jung Woon Yang

SCIENTIFIC REPORTS, v.7, no.1, pp.3146
Publication Date2017-06 Long-Range Lattice Engineering of MoTe2 by a 2D Electride
Sera Kim; Seunghyun Song; Jongho Park, et al

NANO LETTERS, v.17, no.6, pp.3363 - 3368
Publication Date2017-06 Active hydrogen evolution through lattice distortion in metallic MoTe2
Jinbong Seok; Jun-Ho Lee; Suyeon Cho, et al

2D MATERIALS, v.4, no.2, pp.025061-1 - 025061-8
Publication Date2017-05 Optically active charge transfer in hybrids of Alq(3) nanoparticles and MoS2 monolayer
Ganesh Ghimire; Krishna P. Dhakal; Guru P. Neupane, et al

NANOTECHNOLOGY, v.28, no.18, pp.185702
Publication Date2017-05 Integrated Freestanding Two-dimensional Transition Metal Dichalcogenides
Hyun Jeong; Hye Min Oh; Anisha Gokarna, et al

ADVANCED MATERIALS, v.29, no.18, pp.1700308
Publication Date2017-04 Selective control of electron and hole tunneling in 2D assembly
Dongil Chu; Young Hee Lee; Eun Kyu Kim

SCIENCE ADVANCES, v.3, no.4, pp.e1602726
Publication Date2017-04 Heterogeneous Defect Domains in Single-Crystalline Hexagonal WS2
Hye Yun Jeong; Youngjo Jin; Seok Joon Yun, et al

ADVANCED MATERIALS, v.29, no.15, pp.1605043
Publication Date2017-04 Charge Transport in MoS2/WSe2 van der Waals Heterostructure with Tunable Inversion Layer
Manh Ha Doan; Youngjo Jin; Subash Adhikari, et al

ACS NANO, v.11, no.4, pp.3832 - 3840
Publication Date2017-04 Recent development of two-dimensional transition metal dichalcogenides and their applications Highly Cited Paper
Wonbong Choi; Nitin Choudhary; Gang Hee Han, et al

MATERIALS TODAY, v.20, no.3, pp.116 - 130
Publication Date2017-03 Junction-Structure-Dependent Schottky Barrier Inhomogeneity and Device Ideality of Monolayer MoS2 Field-Effect Transistors
Byoung Hee Moon; Gang Hee Han; Hyun Kim, et al

ACS APPLIED MATERIALS & INTERFACES, v.9, no.12, pp.11240 - 11246
Publication Date2017-02 Probing Bilayer Grain Boundaries in Large-Area Graphene with Tip-Enhanced Raman Spectroscopy
Kyoung-Duck Park; Markus B. Raschke; Joanna M. Atkin, et al

ADVANCED MATERIALS, v.29, no.7, pp.1603601 - 1603601
Publication Date2017-02 Graphene Substrate for van der Waals Epitaxy of Layer-Structured Bismuth Antimony Telluride Thermoelectric Film
Eun Sung Kim; Jae-Yeol Hwang; Kyu Hyoung Lee, et al

ADVANCED MATERIALS, v.29, no.8, pp.1604899-1 - 1604899-7
Publication Date2017-02 Thickness-dependent in-plane thermal conductivity of suspended MoS2 grown by chemical vapor deposition
Jung Jun Bae; Hye Yun Jeong; Gang Hee Han, et al

NANOSCALE, v.9, no.7, pp.2541 - 2547
Publication Date2017-02 Photocurrent Switching of Monolayer MoS2 Using a Metal-Insulator Transition
Jin Hee Lee; Hamza Zad Gul; Hyun Kim, et al

NANO LETTERS, v.17, no.2, pp.673 - 678

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