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나노구조물리 연구단
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Two-Dimensional Cold Electron Transport for Steep-Slope Transistors

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Title
Two-Dimensional Cold Electron Transport for Steep-Slope Transistors
Author(s)
Liu, Maomao; Jaiswal, Hemendra Nath; Shahi, Simran; Wei, Sichen; Fu, Yu; Chang, Chaoran; Chakravarty, Anindita; Liu, Xiaochi; Yang, Cheng; Liu, Yanpeng; Young Hee Lee; Perebeinos, Vasili; Yao, Fei; Li, Huamin
Publication Date
2021-03
Journal
ACS Nano, v.15, no.3, pp.5762 - 5772
Publisher
American Chemical Society
Abstract
© 2021 American Chemical Society.Room-temperature Fermi-Dirac electron thermal excitation in conventional three-dimensional (3D) or two-dimensional (2D) semiconductors generates hot electrons with a relatively long thermal tail in energy distribution. These hot electrons set a fundamental obstacle known as the "Boltzmann tyranny"that limits the subthreshold swing (SS) and therefore the minimum power consumption of 3D and 2D field-effect transistors (FETs). Here, we investigated a graphene (Gr)-enabled cold electron injection where the Gr acts as the Dirac source to provide the cold electrons with a localized electron density distribution and a short thermal tail at room temperature. These cold electrons correspond to an electronic refrigeration effect with an effective electron temperature of ∼145 K in the monolayer MoS2, which enables the transport factor lowering and thus the steep-slope switching (across for three decades with a minimum SS of 29 mV/decade at room temperature) for a monolayer MoS2 FET. Especially, a record-high sub-60-mV/decade current density (over 1 μA/μm) can be achieved compared to conventional steep-slope technologies such as tunneling FETs or negative capacitance FETs using 2D or 3D channel materials. Our work demonstrates the potential of a 2D Dirac-source cold electron transistor as a steep-slope transistor concept for future energy-efficient nanoelectronics.
URI
https://pr.ibs.re.kr/handle/8788114/9528
DOI
10.1021/acsnano.1c01503
ISSN
1936-0851
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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