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Hyunhwa, Lee
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The growth of HVPE alpha-Ga2O3 crystals and its solar-blind UV photodetector applications

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Title
The growth of HVPE alpha-Ga2O3 crystals and its solar-blind UV photodetector applications
Author(s)
Lee, M.; Yang, M.; Lee, H.-Y.; Lee, H.U.; Hyunhwa, Lee; Son, H.; Kim, U.J.
Publication Date
2021-03
Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.123, pp.1 - 5
Publisher
ELSEVIER SCI LTD
Abstract
While Ga2O3 crystals are considered as the next generation optoelectronic materials, the exploration of HVPE alpha-Ga2O3 crystals and their use as solar-blind UV photodetector are still insufficient. In this paper, we investigated the structural characterization of HVPE alpha-Ga2O3 materials and their properties as solar-blind photodetector. HVPE alpha-Ga2O3 exhibited excellent structural properties with relatively good crystallinity, and smooth surface morphology, without any complicated process. Raman investigations confirmed the existence of slight compressive strain in the as-grown HVPE alpha-Ga2O3. UV-visible spectrophotometry proved that HVPE alpha-Ga2O3 had an optical bandgap of 5.15 eV, evidencing the suitability of this material for application as solar-blind photo detector. Furthermore, the photo-detector synthesized using HVPE alpha-Ga2O3 showed excellent photo-response characteristics. We believe that this study will support further development of functional oxide semiconductor materials and opto-electronic devices.
URI
https://pr.ibs.re.kr/handle/8788114/8981
DOI
10.1016/j.mssp.2020.105565
ISSN
1369-8001
Appears in Collections:
HiddenCommunity > 1. Journal Papers (저널논문)
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