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Fukutani, Keisuke
원자제어 저차원 전자계 연구단
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Surface termination and Schottky-barrier formation of In4Se3(001)

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Title
Surface termination and Schottky-barrier formation of In4Se3(001)
Author(s)
Dhingra, Archit; Galiy, Pavlo, V; Wang, Lu; Vorobeva, Nataliia S..; Lipatov, Alexey; Torres, Angel; Nenchuk, Taras M.; Gilbert, Simeon J.; Sinitskii, Alexander; Yost, Andrew J.; Mei, Wai-Ning; Keisuke Fukutani; Chen, Jia-Shiang; Dowben, Peter A.
Subject
In4Se3, ; quasi-1D trichalcogenide, ; Schottky barrier, ; surface termination, ; surface-to-bulk core level shift
Publication Date
2020-06
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.35, no.6, pp.065009
Publisher
IOP PUBLISHING LTD
Abstract
© 2020 IOP Publishing Ltd. The surface termination of In4Se3(001) and the interface of this layered trichalcogenide, with Au, was examined using x-ray photoemission spectroscopy. Low energy electron diffraction indicates that the surface is highly crystalline, but suggests an absence of C2v mirror plane symmetry. The surface termination of the In4Se3(001) is found, by angle-resolved x-ray photoemission spectroscopy, to be In, which is consistent with the observed Schottky barrier formation found with this n-type semiconductor. Transistor measurements confirm earlier results from photoemission, suggesting that In4Se3(001) is an n-type semiconductor, so that Schottky barrier formation with a large work function metal, such as Au, is expected. The measured low carrier mobilities could be the result of the contacts and would be consistent with Schottky barrier formation
URI
https://pr.ibs.re.kr/handle/8788114/7841
DOI
10.1088/1361-6641/ab7e45
ISSN
0268-1242
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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