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Lee, Hye Young
지하실험 연구단
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Performance test for a pixelated silicon sensor with junction field effect transistor

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Title
Performance test for a pixelated silicon sensor with junction field effect transistor
Author(s)
Lee, S.C.; Baek, J.M.; Jeon, H.B.; Kang, K.H.; Kim, J.Y.; Hye Young Lee; Lee, M.W.; Park, H.
Subject
Drain current, ; Field effect transistor, ; Gate voltage, ; Pixelated sensor, ; Switch
Publication Date
2020-10
Journal
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, v.978, pp.164419
Publisher
ELSEVIER SCIENCE BV
Abstract
© 2020 Elsevier B.V. We fabricated a pixelated silicon sensor with a junction field effect transistor (JFET) on a 650μm thick, high-resistivity (> 5 kΩ⋅cm) n-type double-sided polished 6-in. silicon wafer using a double-sided fabrication process. The JFET, which had a cylindrical structure, acted as a switch to read out charges accumulated in the pixelated sensor. We investigated the electrical characteristics of the pixelated sensor, which had a size of 100μm×100μm. We also measured the drain current as a function of the drain voltage for different gate voltages to examine the switching performance of the JFET and optimized the design parameters of the pixelated sensor for the proper functioning of the switch. Furthermore, the pixelated sensor's responses under illumination by a light-emitting diode and X-rays were measured. The electrical characteristics and responses of the pixelated sensors are presented in this paper
URI
https://pr.ibs.re.kr/handle/8788114/7616
DOI
10.1016/j.nima.2020.164419
ISSN
0168-9002
Appears in Collections:
Center for Underground Physics(지하실험 연구단) > 1. Journal Papers (저널논문)
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