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Multiple surface conduction channels via topological insulator and amorphous insulator thin film multi-stacks

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Title
Multiple surface conduction channels via topological insulator and amorphous insulator thin film multi-stacks
Author(s)
Jerng, SK; Jeon, JH; Kim, Y; Jun Sung Kim; Chun, SH
Subject
Topological insulator, ; Bismuth selenide, ; van der Waals epitaxy, ; Molecular beam epitaxy, ; Atomic layer deposition
Publication Date
2019-03
Journal
CURRENT APPLIED PHYSICS, v.19, no.3, pp.219 - 223
Publisher
ELSEVIER SCIENCE BV
Abstract
Multi-channel Bi2Se3 thin films were grown by combining molecular beam epitaxy and atomic layer deposition. High-resolution transmission electron microscope images showed that c-axis oriented Bi2Se3 grew on amorphous Al2O3 even after multiple stacking. While the surface morphology degraded for the upper layers, each layer was electrically similar. The electrical transport measurements showed that the weak anti-localization effect was quantitatively enhanced upon increasing the number of Bi2Se3 channels. Our results provide a promising approach to exploit diverse combinations of layered topological insulator films vertically stacked with amorphous insulator films. c.2018 Korean Physical Society. Published by Elsevier B.V. All rights reserved.
URI
https://pr.ibs.re.kr/handle/8788114/6480
DOI
10.1016/j.cap.2018.07.020
ISSN
1567-1739
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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2019_Current Applied Physice_김준성(공동)_Multiple surface conduction channels via topological insulator and amorphous insulator thin film multi-stacks _ Elsevier Enhanced Reader.pdfDownload

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