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원자제어 저차원 전자계 연구단
원자제어 저차원 전자계 연구단
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Electroluminescence from h-BN by using Al2O3/h-BN multiple heterostructure

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Title
Electroluminescence from h-BN by using Al2O3/h-BN multiple heterostructure
Author(s)
Lee, SH; Jeong, H; Kim, DY; SEUNGYOUNG SEO; CHEOLHEE HAN; Okello, OFN; Lo, JI; Peng, YC; Oh, CH; Lee, GW; Shim, JI; Cheng, BM; Song, K; Choi, SY; MOON-HO JO; Kim, JK
Publication Date
2019-07
Journal
OPTICS LETTERS, v.27, no.14, pp.19692 - 19701
Publisher
OPTICAL SOC AMER
Abstract
© 2019 Optical Society of America.Two-dimensional (2-D) hexagonal boron nitride (h-BN) has attracted considerable attention for deep ultraviolet optoelectronics and visible single photon sources, however, realization of an electrically-driven light emitter remains challenging due to its wide bandgap nature. Here, we report electrically-driven visible light emission with a red-shift under increasing electric field from a few layer h-BN by employing a five-period Al2O3/h-BN multiple heterostructure and a graphene top electrode. Investigation of electrical properties reveals that the Al2O3 layers act as potential barriers confining injected carriers within the h-BN wells, while suppressing the electrostatic breakdown by trap-assisted tunneling, to increase the probability of radiative recombination. The result highlights a promising potential of such multiple heterostructure as a practical and efficient platform for electrically-driven light emitters based on wide bandgap two-dimensional materials
URI
https://pr.ibs.re.kr/handle/8788114/6460
ISSN
0146-9592
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
Files in This Item:
2019_Optics Letter_조문호(공동)_Electroluminescence from h-BN by using Al2O3h-BN multiple heterostructure.pdfDownload

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