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Keisuke Fukutani
원자제어 저차원 전자계 연구단
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Steep-Slope Threshold Switch Enabled by Pulsed-Laser-Induced Phase Transformation

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Title
Steep-Slope Threshold Switch Enabled by Pulsed-Laser-Induced Phase Transformation
Author(s)
Park, Y; Yoon, D; Keisuke Fukutani; Roland Stania; Son, J
Publication Date
2019-07
Journal
ACS APPLIED MATERIALS & INTERFACES, v.11, no.27, pp.24221 - 24229
Publisher
AMER CHEMICAL SOC
Abstract
Super-steep two-terminal electronic devices using NbO2, which abruptly switch from insulator to metal at a threshold voltage (Vth), offer diverse strategies for energy-efficient and high-density device architecture to overcome fundamental limitation in current electronics. However, the tight control of stoichiometry and high-temperature processing limit practical implementation of NbO2 as a component of device integration. Here, we demonstrate a facile room-temperature process that uses solid-solid phase transformation induced by pulsed laser to fabricate NbO2-based threshold switches. Interestingly, pulsed laser annealing under a reducing environment facilitates a two-step nucleation pathway (a-Nb2O5 → o-Nb2O5-δ → t-NbO2) of the threshold-enabled NbO2 phase mediated by oxygen vacancies in o-Nb2O5-δ. The laser-annealed devices with embedded NbO2 crystallites exhibit excellent threshold device performance with low off-current and high on/off current ratio. Our strategy that exploits the interactions of pulsed lasers with multivalent metal oxides can guide the development of a rational route to achieve NbO2-based threshold switches that are compatible with current semiconductor fabrication technology. © 2019 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/6457
ISSN
1944-8244
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
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2019_ACS Applied materials&Interfaces_Roland,Keisuke(공동)_Steep-Slope Threshold Switch Enabled by Pulsed-Laser-Induced Phase Transformation.pdfDownload

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