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나노 구조 물리 연구단
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Revealing antiferromagnetic transition of van der Waals MnPS3 via vertical tunneling electrical resistance measurement

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Title
Revealing antiferromagnetic transition of van der Waals MnPS3 via vertical tunneling electrical resistance measurement
Author(s)
Dinh Hoa Luong; Thanh Luan Phan; Ganesh Ghimire; Dinh Loc Duong; Young Hee Lee
Publication Date
2019-08
Journal
APL MATERIALS, v.7, no.8, pp.081102 -
Publisher
AMER INST PHYSICS
Abstract
Understanding the correlation between the electronic and magnetic properties of materials is a crucial step to functionalize or modulate their properties. However, it is not straightforward to electrically characterize magnetic insulators, especially large-bandgap materials, due to their high resistivity. Here, we successfully performed electrical measurements of a two-dimensional (2D) antiferromagnetic insulator, van der Waals-layered MnPS3, by accounting for the vertical graphene/MnPS3/graphene heterostructure. Antiferromagnetic transition is observed by the variance in electrical resistance from the paramagnetic to antiferromagnetic transition near similar to 78 K in the vertically stacked heterostructure devices, which is consistent with the magnetic moment measurement. This opens an opportunity for modulating the magnetic transition of 2D van der Waals materials via an electrical gate or surface functionalization. (c) 2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/)
URI
https://pr.ibs.re.kr/handle/8788114/6455
ISSN
2166-532X
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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