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Jianhua Gao
원자제어 저차원 전자계 연구단
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Growth of quadrilateral graphene flakes with a sulfur atomic template on the surface of Ni (110)

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Title
Growth of quadrilateral graphene flakes with a sulfur atomic template on the surface of Ni (110)
Author(s)
Guo H.; Jianhua Gao; Ishida N.; Sagisaka K.; Fujita D.
Publication Date
2019-11
Journal
CARBON, v.153, no., pp.116 - 119
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Abstract
© 2019 Elsevier LtdThe relationship between the properties and substrates of graphene is important to research the graphene synthesized by a bottom-up approach. Here, we synthesized graphene with a surface segregation method and demonstrated that a quadrilateral graphene was formed by using Ni(110) as a substrate. Most of the graphene edges were parallel to the [101] or [100] directions of Ni(110). We found that sulfur impurities in Ni that segregated to the surface with a C(2 × 2) surface reconstruction during the graphene growth played critical roles in the formation of the quadrilateral graphene flakes
URI
https://pr.ibs.re.kr/handle/8788114/6409
ISSN
0008-6223
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
Files in This Item:
2019_Carbon_Gao(공동)_Growth of quadrilateral graphene flakes with a sulfur atomic template on the surface of Ni (110) _ Elsevier Enhanced Reader.pdfDownload

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