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원자제어 저차원 전자계 연구단
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Epitaxial van der Waals Contacts between Transition-Metal Dichalcogenide Monolayer Polymorphs

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Title
Epitaxial van der Waals Contacts between Transition-Metal Dichalcogenide Monolayer Polymorphs
Author(s)
Chang-Soo Lee; Oh S.J.; Hoseok Heo; Seung-Young Seo; Juho Kim; Yong Hyeon Kim; Donghwi Kim; Ngome Okello O.F.; Hocheol Shin; Ji Ho Sung; Choi S.-Y.; Jun Sung Kim; Jong Kyu Kim; Moon-Ho Jo
Publication Date
2019-03
Journal
NANO LETTERS, v.19, no.13, pp.1814 - 1820
Publisher
AMER CHEMICAL SOC
Abstract
We have achieved heteroepitaxial stacking of a van der Waals (vdW) monolayer metal, 1T'-WTe 2 , and a semiconductor, 2H-WSe 2 , in which a distinctively low contact barrier was established across a clean epitaxial vdW gap. Our epitaxial 1T'-WTe 2 films were identified as a semimetal by low temperature transport and showed the robust breakdown current density of 5.0 × 10 7 A/cm 2 . In comparison with a series of planar metal contacts, our epitaxial vdW contact was identified to possess intrinsic Schottky barrier heights below 100 meV for both electron and hole injections, contributing to superior ambipolar field-effect transistor (FET) characteristics, i.e., higher FET mobilities and higher on-off current ratios at smaller threshold gate voltages. We discuss our observations around the critical roles of the epitaxial vdW heterointerfaces, such as incommensurate stacking sequences and absence of extrinsic interfacial defects that are inaccessible by other contact methods. © Copyright 2019 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/5896
ISSN
1530-6984
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
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Nano letters_조문호(교신)_Epitaxial van der Waals Contacts between Transition-Metal Dichalcogenide Monolayer Polymorphsacs.nanolett.8b04869.pdfDownload

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