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나노 구조 물리 연구단
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Boosting photoresponse in silicon metal-semiconductor-metal photodetector using semiconducting quantum dots

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Title
Boosting photoresponse in silicon metal-semiconductor-metal photodetector using semiconducting quantum dots
Author(s)
Chandan Biswas; Yong Hwan Kim; Young Hee Lee
Publication Date
2016-11
Journal
SCIENTIFIC REPORTS, v.6, no., pp.37857 -
Publisher
NATURE PUBLISHING GROUP
Abstract
Silicon based metal-semiconductor-metal (MSM) photodetectors have faster photogeneration and carrier collection across the metal-semiconductor Schottky contacts, and CMOS integratibility compared to conventional p-n junction photodetectors. However, its operations are limited by low photogeneration, inefficient carrier-separation, and low mobility. Here, we show a simple and highly effective approach for boosting Si MSM photodetector efficiency by uniformly decorating semiconducting CdSe quantum dots on Si channel (Si-QD). Significantly higher photocurrent on/off ratio was achieved up to over 500 compared to conventional Si MSM photodetector (on/off ratio ∼5) by increasing photogeneration and improving carrier separation. Furthermore, a substrate-biasing technique invoked wide range of tunable photocurrent on/off ratio in Si-QD photodetector (ranging from 2.7 to 562) by applying suitable combinations of source-drain and substrate biasing conditions. Strong photogeneration and carrier separation were achieved by employing Stark effect into the Si-QD hybrid system. These results highlight a promising method for enhancing Si MSM photodetector efficiency more than 100 times and simultaneously compatible with current silicon technologies. © The Author(s) 2016
URI
http://pr.ibs.re.kr/handle/8788114/3255
DOI
10.1038/srep37857
ISSN
2045-2322
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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