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A systematic study of the synthesis of monolayer tungsten diselenide films on gold foil

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dc.contributor.authorSeok Joon Yun-
dc.contributor.authorSoo Min Kim-
dc.contributor.authorKi Kang Kim-
dc.contributor.authorYoung Hee Lee-
dc.date.available2016-10-26T06:58:10Z-
dc.date.created2016-10-20-
dc.date.issued2016-09-
dc.identifier.issn1567-1739-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/2876-
dc.description.abstractWe report a systematic study of the synthesis of large-area monolayer WSe2 on gold foil by controlling the growth temperature and the partial pressure of hydrogen during chemical vapor deposition. The gold surface causes surface-mediated growth to form monolayer WSe2 films. The amount of the tungsten source is controlled by adjusting the partial pressure of hydrogen, which plays a role in the reduction of WO3 (solid phase) into WO3x (vapor phase). The coverage of monolayer WSe2 can be effectively controlled by changing either the partial pressure of hydrogen or the growth temperature at a fixed growth time under an Se-rich atmosphere, resulting in 100% coverage of the WSe2 film. The crystallinity and thickness uniformity are characterized by Raman spectroscopy, photoluminescence, and transmission electron microscopy. This characterization reveals that the quality of the WSe2 film is comparable to mechanically-exfoliated monolayer WSe2 and possesses good thickness uniformity. © 2016 Elsevier B.V.-
dc.language영어-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectTungsten diselenide, Chemical vapor deposition, Transition metal dichalcogenides, Gold-
dc.titleA systematic study of the synthesis of monolayer tungsten diselenide films on gold foil-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000384131600042-
dc.identifier.scopusid2-s2.0-84966692493-
dc.identifier.rimsid57522ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorSeok Joon Yun-
dc.contributor.affiliatedAuthorYoung Hee Lee-
dc.identifier.doi10.1016/j.cap.2016.02.010-
dc.identifier.bibliographicCitationCURRENT APPLIED PHYSICS, v.16, no.9, pp.1216 - 1222-
dc.relation.isPartOfCURRENT APPLIED PHYSICS-
dc.citation.titleCURRENT APPLIED PHYSICS-
dc.citation.volume16-
dc.citation.number9-
dc.citation.startPage1216-
dc.citation.endPage1222-
dc.date.scptcdate2018-10-01-
dc.description.wostc7-
dc.description.scptc8-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.subject.keywordAuthorChemical vapor deposition-
dc.subject.keywordAuthorGold-
dc.subject.keywordAuthorTransition metal dichalcogenides-
dc.subject.keywordAuthorTungsten diselenide-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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