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Chemically Modulated Band Gap in Bilayer Graphene Memory Transistors with High On/Off Ratio

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dc.contributor.authorSi Young Lee-
dc.contributor.authorDinh Loc Duong-
dc.contributor.authorQuoc An Vu-
dc.contributor.authorYoungjo Jin-
dc.contributor.authorPhilip Kim-
dc.contributor.authorYoung Hee Lee-
dc.date.available2016-01-07T09:15:51Z-
dc.date.created2015-10-06-
dc.date.issued2015-09-
dc.identifier.issn1936-0851-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/2152-
dc.description.abstractWe report a chemically conjugated bilayer graphene field effect transistor demonstrating a high on/off ratio without significant degradation of the on-current and mobility. This was realized by introducing environmentally stable benzyl viologen as an electron-donating group and atmospheric dopants as an electron-withdrawing group, which were used as dopants for the bottom and top of the bilayer graphene, respectively. A high mobility of ∼3100 cm2 V-1 s-1 with a high on/off ratio of 76.1 was obtained at room temperature without significant degradation of the on-current. This is attributed to low charge scattering due to physisorbed dopants without provoking sp3 structural disorders. By utilizing our band-gap-opened bilayer graphene, excellent nonvolatile memory switching behavior was demonstrated with a clear program/erase state by applying pulse gate bias. The initial program/erase current ratio of ∼34.5 was still retained at higher than 10 even after 104 s. © 2015 American Chemical Society-
dc.description.uri1-
dc.language영어-
dc.publisherAMER CHEMICAL SOC-
dc.subjectband-gap opening-
dc.subjectbilayer graphene-
dc.subjectdoping-
dc.subjectnonvolatile memory-
dc.subjecton/off ratio-
dc.titleChemically Modulated Band Gap in Bilayer Graphene Memory Transistors with High On/Off Ratio-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000361935800041-
dc.identifier.scopusid2-s2.0-84942357981-
dc.identifier.rimsid21283ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorSi Young Lee-
dc.contributor.affiliatedAuthorDinh Loc Duong-
dc.contributor.affiliatedAuthorQuoc An Vu-
dc.contributor.affiliatedAuthorYoungjo Jin-
dc.contributor.affiliatedAuthorYoung Hee Lee-
dc.identifier.doi10.1021/acsnano.5b03130-
dc.identifier.bibliographicCitationACS NANO, v.9, no.9, pp.9034 - 9042-
dc.citation.titleACS NANO-
dc.citation.volume9-
dc.citation.number9-
dc.citation.startPage9034-
dc.citation.endPage9042-
dc.date.scptcdate2018-10-01-
dc.description.wostc20-
dc.description.scptc23-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusGATE-
dc.subject.keywordPlusTRANSPARENT-
dc.subject.keywordPlusHYSTERESIS-
dc.subject.keywordPlusSUBSTRATE-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusDEVICES-
dc.subject.keywordAuthorbilayer graphene-
dc.subject.keywordAuthorband-gap opening-
dc.subject.keywordAuthordoping-
dc.subject.keywordAuthoron/off ratio-
dc.subject.keywordAuthornonvolatile memory-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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