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Electric Control of 2D Van Hove Singularity in Oxide Ultra-Thin Films

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dc.contributor.authorDonghan Kim-
dc.contributor.authorYounsik Kim-
dc.contributor.authorByungmin Sohn-
dc.contributor.authorMinsoo Kim-
dc.contributor.authorBongju Kim-
dc.contributor.authorTae Won Noh-
dc.contributor.authorChangyoung Kim-
dc.date.accessioned2023-05-04T22:00:39Z-
dc.date.available2023-05-04T22:00:39Z-
dc.date.created2023-04-03-
dc.date.issued2023-04-
dc.identifier.issn0935-9648-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/13319-
dc.description.abstractDivergent density of states (DOS) can induce extraordinary phenomena such as significant enhancement of superconductivity and unexpected phase transitions. Moreover, van Hove singularities (VHSs) lead to divergent DOS in 2D systems. Despite recent interest in VHSs, only a few controllable cases have been reported to date. In this work, by utilizing an atomically ultra-thin SrRuO3 film, the electronic structure of a 2D VHS is investigated with angle-resolved photoemission spectroscopy and transport properties are controlled. By applying electric fields with alkali metal deposition and ionic-liquid gating methods, the 2D VHS and the sign of the charge carrier are precisely controlled. Use of a tunable 2D VHS in an atomically flat oxide film could serve as a new strategy to realize infinite DOS near the Fermi level, thereby allowing efficient tuning of electric properties. © 2023 Wiley-VCH GmbH.-
dc.language영어-
dc.publisherJohn Wiley and Sons Inc-
dc.titleElectric Control of 2D Van Hove Singularity in Oxide Ultra-Thin Films-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000950336400001-
dc.identifier.scopusid2-s2.0-85150763374-
dc.identifier.rimsid80428-
dc.contributor.affiliatedAuthorDonghan Kim-
dc.contributor.affiliatedAuthorYounsik Kim-
dc.contributor.affiliatedAuthorByungmin Sohn-
dc.contributor.affiliatedAuthorMinsoo Kim-
dc.contributor.affiliatedAuthorBongju Kim-
dc.contributor.affiliatedAuthorTae Won Noh-
dc.contributor.affiliatedAuthorChangyoung Kim-
dc.identifier.doi10.1002/adma.202207188-
dc.identifier.bibliographicCitationAdvanced Materials, v.35, no.17-
dc.relation.isPartOfAdvanced Materials-
dc.citation.titleAdvanced Materials-
dc.citation.volume35-
dc.citation.number17-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordAuthorultrathin film-
dc.subject.keywordAuthorvan Hove singularity (VHS)-
dc.subject.keywordAuthorangle-resolved photoemission spectroscopy-
dc.subject.keywordAuthorelectronic structure-
dc.subject.keywordAuthorHall effect-
dc.subject.keywordAuthorionic liquid gating-
dc.subject.keywordAuthoroxide thin film-
dc.subject.keywordAuthorruthenate-
dc.subject.keywordAuthortransport measurement-
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
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