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원자제어 저차원 전자계 연구단
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Resistivity of Surface Steps in Bulk-Insulating Topological Insulators

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Title
Resistivity of Surface Steps in Bulk-Insulating Topological Insulators
Author(s)
Ko, Wonhee; Hus, Saban; Hoil Kim; Jun Sung Kim; Zhang, Xiao-Guang; Li, An-Ping
Publication Date
2022-05
Journal
FRONTIERS IN MATERIALS, v.9
Publisher
FRONTIERS MEDIA SA
Abstract
Electron transport in topological insulators usually involves both topologically protected surface states and trivial electronic states in the bulk material. The surface transport is particularly interesting; however, it is also susceptible to atomic defects on the surfaces, such as vacancies, impurities, and step edges. Experimental determination of scattering effects of these surface defects requires both nanoscale spatial resolution and the ability to decipher surface transport from bulk transport. Here we directly measure the resistivity of individual surface steps in the surface dominating transport process of topological insulator Bi2Te2Se. A variable probe-spacing transport spectroscopy with a multiprobe scanning tunneling microscope is used to differentiate the surface conductance from bulk conductance, allowing the identification of a surface dominant transport regime. The technique also reveals a deviation from ideal 2D transport at atomic steps. Then, a multi-probe scanning tunneling potentiometry is employed to visualize the electrochemical potentials across individual step edges. A quantitative analysis of the potential distributions enables us to acquire a resistivity of 0.530 m omega center dot cm for the one quintuple-layer atomic step. The result indicates that atomic defects, despite preserving the time-reversal symmetry, can still significantly affect the transport in topological insulators.
URI
https://pr.ibs.re.kr/handle/8788114/12043
DOI
10.3389/fmats.2022.887484
ISSN
2296-8016
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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