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원자제어 저차원 전자계 연구단
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Z3Charge Density Wave of Silicon Atomic Chains on a Vicinal Silicon Surface

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Title
Z3Charge Density Wave of Silicon Atomic Chains on a Vicinal Silicon Surface
Author(s)
Euihwan Do; Jae Whan Park; Stetsovych, Oleksandr; Jelinek, Pavel; Han Woong Yeom
Publication Date
2022-04
Journal
ACS Nano, v.16, no.4, pp.6598 - 6604
Publisher
American Chemical Society
Abstract
© 2022 The Authors. Published by American Chemical Society.An ideal one-dimensional electronic system is formed along atomic chains on Au-decorated vicinal silicon surfaces, but the nature of its low-temperature phases has been puzzling for last two decades. Here, we unambiguously identify the low-temperature structural distortion of this surface using high-resolution atomic force microscopy and scanning tunneling microscopy. The most important structural ingredient of this surface, the step-edge Si chains, are found to be strongly buckled, every third atom down, forming trimer unit cells. This observation is consistent with the recent model of rehybridized dangling bonds and rules out the antiferromagnetic spin ordering proposed earlier. The spectroscopy and electronic structure calculation indicate a charge density wave insulator with a Z3 topology, making it possible to exploit topological phases and excitations. The tunneling current was found to substantially lower the energy barrier between three degenerate CDW states, which induces a dynamically fluctuating CDW at very low temperature.
URI
https://pr.ibs.re.kr/handle/8788114/11967
DOI
10.1021/acsnano.2c00972
ISSN
1936-0851
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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