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Deep-ultraviolet electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures

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Title
Deep-ultraviolet electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures
Author(s)
Su-Beom Song; Sangho Yoon; So Young Kim; Sera Yang; Seung-Young Seo; Soonyoung Cha; Jeong, Hyeon-Woo; Watanabe, Kenji; Taniguchi, Takashi; Lee, Gil-Ho; Jun Sung Kim; Moon-Ho Jo; Jonghwan Kim
Publication Date
2021-12
Journal
Nature Communications, v.12, no.1
Publisher
Nature Research
Abstract
© 2021, The Author(s).Hexagonal boron nitride (hBN) is a van der Waals semiconductor with a wide bandgap of ~ 5.96 eV. Despite the indirect bandgap characteristics of hBN, charge carriers excited by high energy electrons or photons efficiently emit luminescence at deep-ultraviolet (DUV) frequencies via strong electron-phonon interaction, suggesting potential DUV light emitting device applications. However, electroluminescence from hBN has not been demonstrated at DUV frequencies so far. In this study, we report DUV electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures at room temperature. Tunneling carrier injection from graphene electrodes into the band edges of hBN enables prominent electroluminescence at DUV frequencies. On the other hand, under DUV laser illumination and external bias voltage, graphene electrodes efficiently collect photo-excited carriers in hBN, which generates high photocurrent. Laser excitation micro-spectroscopy shows that the radiative recombination and photocarrier excitation processes in the heterostructures mainly originate from the pristine structure and the stacking faults in hBN. Our work provides a pathway toward efficient DUV light emitting and detection devices based on hBN.
URI
https://pr.ibs.re.kr/handle/8788114/10933
DOI
10.1038/s41467-021-27524-w
ISSN
2041-1723
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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