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Publication Date2019-06
Anomalous Conductance near Percolative Metal-Insulator Transition in Monolayer MoS2 at Low Voltage Regime
Byoung Hee Moon; Jung Jun Bae; Gang Hee Han, et al
ACS NANO, v.13, no.6, pp.6631 - 6637
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Publication Date2019-10
Impact of Heat Treatment on a Hetero-Stacked MoS2/h-BN Field-Effect Transistor
Hyunjin Ji; Hojoon Yi; Huong Thi Thanh Nguyen, et al
IEEE ELECTRON DEVICE LETTERS, v.40, no.10, pp.1626 - 1629
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Publication Date2016-06
Large Work Function Modulation of Monolayer MoS2 by Ambient Gases
Si Young Lee; Kim U.J.; Chung J., et al
ACS NANO, v.10, no.6, pp.6100 - 6107
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Publication Date2017-08
LOW-TEMPERATURE OHMIC CONTACT TO MONOLAYER MOS2 BY VAN DER WAALS BONDED CO/H-BN ELECTRODES
Xu Cui; En-Min Shih; Luis A. Jauregui, et al
NANO LETTERS, v.17, no.8, pp.4781 - 4786
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Publication Date2016-03
Metal-Insulator-Semiconductor Diode Consisting of Two-Dimensional Nanomaterials
Hyun Jeong; Hye Min Oh; Seungho Bang, et al
NANO LETTERS, v.16, no.3, pp.1858 - 1862
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Publication Date2016-11
Modulating Electronic Properties of Monolayer MoS2 via Electron-Withdrawing Functional Groups of Graphene Oxide
Hye Min Oh; Hyun Jeong; Gang Hee Han, et al
ACS NANO, v.10, no.11, pp.10446 - 10453
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Publication Date2015-10
Semiconductor–Insulator–Semiconductor Diode Consisting of Monolayer MoS2, h-BN, and GaN Heterostructure
Hyun Jeong; Seungho Bang; Hye Min Oh, et al
ACS NANO, v.9, no.10, pp.10032 - 10038