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Publication Date2018-06
Gas adsorbates are Coulomb scatterers, rather than neutral ones, in a monolayer MoS2 field effect transistor
Hyunjin Ji; Hojoon Yi; Jinbong Seok, et al
NANOSCALE, v.10, no.23, pp.10856 - 10862
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Publication Date2016-07
Suppression of Interfacial Current Fluctuation in MoTe2 Transistors with Different Dielectrics
Ji H.; Min-Kyu Joo; Yoojoo Yun, et al
ACS APPLIED MATERIALS & INTERFACES, v.8, no.29, pp.19092 - 19099
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Publication Date2017-08
Tunable Mobility in Double-Gated MoTe2 Field-Effect Transistor: Effect of Coulomb Screening and Trap Sites
Hyunjin Ji; Min-Kyu Joo; Hojoon Yi, et al
ACS APPLIED MATERIALS & INTERFACES, v.9, no.34, pp.29185 - 29192
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Publication Date2017-02
Understanding Coulomb Scattering Mechanism in Monolayer MoS2 Channel in the Presence of h-BN Buffer Layer
Min-Kyu Joo; Byoung Hee Moon; Hyunjin Ji, et al
ACS APPLIED MATERIALS & INTERFACES, v.9, no.5, pp.5006 - 5013