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Publication Date2022-08
Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length
Song, Seunguk; Aram Yoon; Ha, Jong-Kwon, et al
NATURE COMMUNICATIONS, v.13, no.1
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Publication Date2023-07
GeAs as an emerging p-type van der Waals semiconductor and its application in p-n photodiodes
Jung Ho Kim; Han, Gang Hee; Moon, Byoung Hee
NANOTECHNOLOGY, v.34, no.31
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Publication Date2018-05
In situ edge engineering in two-dimensional transition metal dichalcogenides
Xiahan Sang; Xufan Li; Wen Zhao, et al
NATURE COMMUNICATIONS, v.9, no.1, pp.2051
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Publication Date2015-08
Phase patterning for ohmic homojunction contact in MoTe2
Highly Cited Paper
Suyeon Cho; Sera Kim; Jung Ho Kim, et al
SCIENCE, v.349, no.6248, pp.625 - 628
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Publication Date2017-06
Post-patterning of an electronic homojunction in atomically thin monoclinic MoTe2
Sera Kim; Jung Ho Kim; Dohyun Kim, et al
2D MATERIALS, v.4, no.2, pp.024004
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Publication Date2016-10
Strong Coulomb scattering effects on low frequency noise in monolayer WS2 fieldeffecttransistors
Min-Kyu Joo; Yoojoo Yun; Seok Joon Yun, et al
APPLIED PHYSICS LETTERS, v.109, no.15, pp.153102
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Publication Date2017-10
Te Monolayer-Driven Spontaneous van der Waals Epitaxy of Two-dimensional Pnictogen Chalcogenide Film on Sapphire
Jae-Yeol Hwang; Young-Min Kim; Kyu Hyoung Lee, et al
NANO LETTERS, v.17, no.10, pp.6140 - 6145
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Publication Date2020-03
Temperature dependence of velocity saturation in a multilayer molybdenum disulfide transistor
Byoung Hee Moon; Hyunjin Ji; Jung Jun Bae, et al
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.35, no.3, pp.035030
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Publication Date2020-02
Ultrashort Vertical-Channel van der Waals Semiconductor Transistors
Jinbao Jiang; Manh‐Ha Doan; Linfeng Sun, et al
ADVANCED SCIENCE, v.7, no.4, pp.1902964
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Publication Date2020-04
Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal–semiconductor contacts at the Schottky–Mott limit
Seunguk Song; Yeoseon Sim; Se-Yang Kim, et al
Nature Electronics, v.3, no.4, pp.207 - 215