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Publication Date2018-06
Gas adsorbates are Coulomb scatterers, rather than neutral ones, in a monolayer MoS2 field effect transistor
Hyunjin Ji; Hojoon Yi; Jinbong Seok, et al
NANOSCALE, v.10, no.23, pp.10856 - 10862
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Publication Date2020-01
High-Performance Field-Effect Transistor and Logic Gates Based on GaS-MoS2 van der Waals Heterostructure
Shin, Gwang Hyuk; Lee, Geon-Beom; Eun-Su An, et al
ACS APPLIED MATERIALS & INTERFACES, v.12, no.4, pp.5106 - 5112
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Publication Date2018-07
Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS2 field-effect transistors
Quoc An Vu; Sidi Fan; Sang Hyup Lee, et al
2D MATERIALS, v.5, no.3, pp.031001
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Publication Date2019-08
Reduced interfacial fluctuation leading enhanced mobility in a monolayer MoS2 DG FET under low vertical electric field
Hyunjin Ji; Hojoon Yi; Sakong Wonkil, et al
NANOTECHNOLOGY, v.30, no.34, pp.345206
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Publication Date2016-07
Suppression of Interfacial Current Fluctuation in MoTe2 Transistors with Different Dielectrics
Ji H.; Min-Kyu Joo; Yoojoo Yun, et al
ACS APPLIED MATERIALS & INTERFACES, v.8, no.29, pp.19092 - 19099
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Publication Date2016-07
Surface Modulation of Graphene Field Effect Transistors on Periodic Trench Structure
Jin J.E.; Choi J.H.; Yun H., et al
ACS APPLIED MATERIALS & INTERFACES, v.8, no.28, pp.18513 - 18518
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Publication Date2017-08
Tunable Mobility in Double-Gated MoTe2 Field-Effect Transistor: Effect of Coulomb Screening and Trap Sites
Hyunjin Ji; Min-Kyu Joo; Hojoon Yi, et al
ACS APPLIED MATERIALS & INTERFACES, v.9, no.34, pp.29185 - 29192
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Publication Date2017-02
Understanding Coulomb Scattering Mechanism in Monolayer MoS2 Channel in the Presence of h-BN Buffer Layer
Min-Kyu Joo; Byoung Hee Moon; Hyunjin Ji, et al
ACS APPLIED MATERIALS & INTERFACES, v.9, no.5, pp.5006 - 5013