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Publication Date2014-02
Chemical structures and electrical properties of atomic layerdeposited HfO2thin films grown at an extremely low temperature(≤100◦C) using O3as an oxygen sourceJeong
Jeong Hwan Kim; Tae Joo Park; Seong Keun Kim, et al
APPLIED SURFACE SCIENCE, v.292, pp.852 - 856
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Publication Date2019-01
Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2
Lee T.Y.; Lee K.; Lim H.H., et al
ACS APPLIED MATERIALS & INTERFACES, v.11, no.3, pp.3142 - 3149
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Publication Date2019-10
Stable Subloop Behavior in Ferroelectric Si-Doped HfO2
Lee, K; Lee, HJ; Lee, TY, et al
ACS APPLIED MATERIALS & INTERFACES, v.11, no.42, pp.38929 - 38936