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Degradation pattern of black phosphorus multilayer field−effect transistors in ambient conditions: Strategy for contact resistance engineering in BP transistors

      
Title : Degradation pattern of black phosphorus multilayer field−effect transistors in ambient conditions: Strategy for contact resistance engineering in BP transistors
Issue Date : 201710
Publisher : ELSEVIER SCIENCE BV
Journal : APPLIED SURFACE SCIENCE, v.419, no.2017, pp.637 - 641
Abstract : Black phosphorus (BP) has been proposed as a future optoelectronic material owing to its direct bandgap with excellent electrical performances. However, oxygen (O2) and water (H2O) molecules in an ambient condition can create undesired bubbles on the surface of the BP, resulting in hampering its excellent intrinsic properties. Here, we report the electrical degradation pattern of a mechanically exfoliated BP field–effect transistor (FET) in terms of the channel and contact, separately. Various electrical parameters such as the threshold voltage (VTH), carrier mobility (μ), contact resistance (RCT) and channel resistance (RCH) are estimated by the Y function method (YFM) with respect to time (up to 2000 min). It is found that RCT reduces and then, increases with time; whereas, the behavior of RCH is vice versa in ambient conditions. We attribute these effects to oxygen doping at the contact and the surface oxidation effects on the surface of the BP, respectively. © 2017 Published by Elsevier B.V.
ISSN : 0169-4332
Language : English
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